Semiconductor device

ABSTRACT

In a semiconductor device, protective films are formed on facing side surfaces of a plurality of circuit patterns and a plating process or the like is not performed on parts aside from the side surfaces where the protective films are formed. This means that when semiconductor elements and contact elements are directly bonded via solder onto the plurality of circuit patterns, a drop-in wettability of the plurality of circuit patterns for the solder is avoided.

CROSS-REFERENCE TO RELATED APPLICATION

This application is based upon and claims the benefit of priority of the prior Japanese Patent Application No. 2017-129041, filed on Jun. 30, 2017, the entire contents of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The embodiments discussed herein are related to a semiconductor device.

2. Background of the Related Art

Semiconductor devices include semiconductor elements such as IGBT (Insulated Gate Bipolar Transistors) and power MOSFET (Metal Oxide Semiconductor Field Effect Transistors). These semiconductor devices are used as power converting devices, for example.

A semiconductor device includes a substrate with an insulating plate and a plurality of circuit patterns formed on a front surface of the insulating plate. Semiconductor elements and external connection terminals are disposed on the circuit patterns and signals applied from the external connection terminals are inputted into the semiconductor elements via the circuit patterns.

Cylindrical contact elements are used when attaching the external connection terminals to the circuit patterns. The external connection terminals are press-fitted into contact elements that have been bonded to the circuit patterns using solder, thereby electrically connecting the external connection terminals to the circuit patterns via the contact elements. See, for example, U.S. Patent Application Publication No. 2009/0194884.

With the semiconductor device described above, a plating process using nickel or the like is performed on the surfaces of the circuit patterns. This suppresses corrosion of the circuit patterns, which prevents substances produced by corrosion (hereinafter referred to as “corrosion products”) from causing short circuits between the circuit patterns.

However, circuit patterns that have been subjected to a plating process are less wettable for solder, which makes it difficult to avoid the production of voids inside the solder. This means that when components such as cylindrical contact elements and semiconductor elements are bonded via solder to circuit patterns that have been plated, it is not possible to achieve sufficient bonding strength for the components on the circuit patterns.

SUMMARY OF THE INVENTION

In one aspect of the embodiments, there is provided a semiconductor device including: a substrate including an insulating plate and a plurality of circuit patterns formed on a front surface of the insulating plate; a plurality of protective films formed on at least facing side portions of the plurality of circuit patterns so as to expose bonding regions on front surfaces of the plurality of circuit patterns; and a plurality of components bonded via solder onto the bonding regions of the plurality of circuit patterns.

The object and advantages of the invention will be realized and attained by means of the elements and combinations particularly pointed out in the claims.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are not restrictive of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view of a semiconductor device according to a first embodiment;

FIG. 2 is a cross-sectional view of the semiconductor device according to the first embodiment;

FIG. 3 is a plan view of the semiconductor device according to the first embodiment, in which components have been omitted;

FIG. 4 depicts circuit patterns on a substrate of a semiconductor device that is a modification of the first embodiment;

FIG. 5 is a plan view of a principal part of a semiconductor device according to a second embodiment;

FIG. 6 is a cross-sectional view of a principal part of a semiconductor device according to the second embodiment;

FIG. 7 is a plan view of a principal part of a semiconductor device according to a third embodiment;

FIG. 8 is a first cross-sectional view of a principal part of the semiconductor device according to the third embodiment; and

FIG. 9 is a second cross-sectional view of a principal part of the semiconductor device according to the third embodiment.

DETAILED DESCRIPTION OF THE INVENTION

Several embodiments will be described below with reference to the accompanying drawings, wherein like reference numerals refer to like elements throughout.

First Embodiment

A semiconductor device according to a first embodiment will now be described with reference to FIGS. 1 to 3.

FIG. 1 is a plan view of a semiconductor device according to the first embodiment. FIG. 2 is a cross-sectional view of the semiconductor device according to the first embodiment. FIG. 3 is a plan view of the semiconductor device according to the first embodiment, in which components have been omitted.

Note that in FIG. 1 and FIG. 3, a cover portion 21 a of a case 21 and a metal substrate 20 have been omitted from the drawings. FIG. 2 is a cross-sectional view along a dot-dash line X-X in FIG. 1. Note also that the components depicted in FIG. 1, that is, semiconductor elements 15 a, 15 b, and 15 d, an electronic component 15 c, contact elements 16 a to 16 g, and bonding wires 17 a to 17 e are omitted from FIG. 3.

As depicted in FIGS. 1 and 2, a semiconductor device 10 has a ceramic circuit substrate 14 (or simply “substrate”), the semiconductor elements 15 a, 15 b, and 15 d, the electronic component 15 c, and the contact elements 16 a to 16 g that are bonded to a front surface of the ceramic circuit substrate 14, and external connection terminals 19 a to 19 g that are respectively attached to the contact elements 16 a to 16 g. Note that the numbers and bonding positions of the semiconductor elements 15 a, 15 b, and 15 d, the electronic component 15 c, and the contact elements 16 a to 16 g that are bonded onto the ceramic circuit substrate 14 (i.e., onto circuit patterns 12 a to 12 h, described later) are mere examples. So long as the semiconductor elements 15 a, 15 b, and 15 d, the electronic component 15 c, and the contact elements 16 a to 16 g are on the ceramic circuit substrate 14 (i.e., on the circuit patterns 12 a to 12 h), configurations aside from that depicted in FIGS. 1 and 2 may be used.

In addition, the semiconductor device 10 has the metal substrate 20, on which the ceramic circuit substrate 14 is disposed, and the case 21, which is provided on the metal substrate 20, which covers the ceramic circuit substrate 14, and from which the external connection terminals 19 a to 19 g extend.

The ceramic circuit substrate 14 has an insulating plate 11, the circuit patterns 12 a to 12 h that are formed on the front surface of the insulating plate 11, and a metal plate 13 formed on a rear surface of the insulating plate 11.

The circuit patterns 12 a to 12 h are formed of a material with superior electrical conductivity and superior wetting for the solder. Examples of this type of material are silver, copper, and alloys that include at least one of these metals. As depicted in FIG. 1, these circuit patterns 12 a to 12 h are respectively formed in predetermined shapes. Note that the number, shapes, and formed positions on the insulating plate 11 of the circuit patterns 12 a to 12 h are mere examples, and may differ from the example in FIGS. 1 and 2.

First protective films 12 a 1, 12 a 2, 12 b 1 to 12 b 3, 12 c 1 to 12 c 3, 12 d 1, 12 d 2, 12 e 1 to 12 e 4, 12 f 1, 12 f 2, 12 g 1 to 12 g 3, 12 h 1, and 12 h 2 are formed on facing side surfaces of the circuit patterns 12 a to 12 h.

More specifically, the first protective films 12 a 1 and 12 a 2 are formed on side surfaces of the circuit pattern 12 a that face the circuit patterns 12 b and 12 e. The first protective films 12 b 1 to 12 b 3 are formed on side surfaces of the circuit pattern 12 b that face the circuit patterns 12 c, 12 e, and 12 a. The first protective films 12 c 1 to 12 c 3 are formed on side surfaces of the circuit pattern 12 c that face the circuit patterns 12 d, 12 e, and 12 b. The first protective films 12 d 1 and 12 d 2 are formed on side surfaces of the circuit pattern 12 d that face the circuit patterns 12 c and 12 e.

The first protective films 12 e 1 to 12 e 3 are formed on side surfaces of the circuit pattern 12 e that face the circuit patterns 12 d, 12 c, 12 b, and 12 a. In addition, the first protective film 12 e 4 is formed on the circuit pattern 12 e on a side surface that faces the circuit patterns 12 f to 12 h.

The first protective films 12 f 1 and 12 f 2 are formed on side surfaces of the circuit pattern 12 f that face the circuit patterns 12 e and 12 g. The first protective films 12 g 1 to 12 g 3 are formed on side surfaces of the circuit pattern 12 g that face the circuit patterns 12 f, 12 e, and 12 h. The first protective films 12 h 1 and 12 h 2 are formed on side surfaces of the circuit pattern 12 h that face the circuit patterns 12 g and 12 e.

Note that in the following description, when no specific distinction is made between the first protective films, the reference numerals 12 a 1, 12 a 2, 12 b 1 to 12 b 3, 12 c 1 to 12 c 3, 12 d 1, 12 d 2, 12 e 1 to 12 e 4, 12 f 1, 12 f 2, 12 g 1 to 12 g 3, 12 h 1, and 12 h 2 may be omitted.

The first protective films use a material with superior resistance to corrosion. Example materials include aluminum, nickel, titanium, chromium, molybdenum, tantalum, niobium, tungsten, vanadium, bismuth, zirconium, hafnium, gold, platinum, palladium, and alloys that include at least one of these metals.

It is possible to form the first protective films described above on the side surfaces of the circuit patterns 12 a to 12 h by electroless plating, for example. When doing so, by forming a mask (resist) in advance in regions of the circuit patterns 12 a to 12 h where the first protective films are not to be formed and removing the resist after electroless plating, it is possible to form the first protective films on only the desired side surfaces of the circuit patterns 12 a to 12 h.

Accordingly, the first protective films described above are formed on only facing side surfaces of the circuit patterns 12 a to 12 h and a plating process is not performed (i.e., plating films are not formed) on regions aside from the side surfaces where the first protective films are formed.

As examples of the ceramic circuit substrate 14 with the configuration described above, it is possible to use a DCB (Direct Copper Bonding) substrate or an AMB (Active Metal Blazed) substrate. The ceramic circuit substrate 14 is capable of conducting heat produced by the semiconductor elements 15 a, 15 b, and 15 d and the electronic component 15 c via the circuit patterns 12 e to 12 h, the insulating plate 11, and the metal plate 13, to the metal substrate 20 side.

The metal plate 13 is formed of a metal material with superior thermal conductivity, such as aluminum, iron, silver, copper or an alloy that includes at least one of these metals.

The insulating plate 11 is formed of a ceramic material with high thermal conductivity, such as aluminum oxide, aluminum nitride, and silicon nitride. Note that as one example, the insulating plate 11 may be rectangular when viewed from above. The metal plate 13 is also formed as a rectangle with a smaller area than the insulating plate 11 when viewed from above.

As one example, the semiconductor elements 15 a, 15 b, and 15 d include switching elements such as IGBT or power MOSFETs. As an example configuration, the semiconductor elements 15 a, 15 b, and 15 d are respectively equipped with drain electrodes (or “collector electrodes”) as main electrodes on their rear surfaces and gate electrodes and source electrodes (or “emitter electrodes”) as main electrodes on their front surfaces.

As appropriate, the semiconductor elements 15 a, 15 b, and 15 d also include diodes such as SBD (Schottky Barrier Diodes) and FWD (Free Wheeling Diodes). The semiconductor elements 15 a, 15 b, and 15 d in this case are respectively equipped with cathode electrodes as main electrodes on their rear surfaces and anode electrodes as main electrodes on their front surfaces. The semiconductor elements 15 a, 15 b, and 15 d described above have their rear surfaces bonded to predetermined circuit patterns 12 e to 12 h.

As the semiconductor elements 15 a, 15 b, and 15 d, it is possible to use silicon semiconductor elements and wide-bandgap semiconductor elements, such as silicon carbide.

Note that the semiconductor elements 15 a and 15 b are bonded via solder 18 h and 18 i onto bonding regions 15 a 1 and 15 b 1 of the circuit pattern 12 e. In addition, the semiconductor element 15 d is bonded via solder 18 l onto a bonding region 15 d 1 of the circuit pattern 12 h.

As examples, the electronic component 15 c is a resistor, a thermistor, a capacitor, or a surge absorber. The electronic component 15 c spans between the circuit patterns 12 f and 12 g and is bonded via solder 18 j and 18 k onto bonding regions 15 c 1 and 15 c 2 of the circuit patterns 12 f and 12 g.

As described earlier and depicted in FIGS. 1 and 3, a plating process or the like is not performed on the circuit patterns 12 a to 12 h aside from the side surfaces where the first protective films are formed. This means that the solder 18 h to 18 l is directly applied onto the bonding regions of the circuit patterns 12 e to 12 h for the semiconductor elements 15 a, 15 b, and 15 d and the electronic component 15 c, thereby avoiding a drop in the wettability of the circuit patterns 12 e to 12 h for the solder 18 h to 18 l. Accordingly, a drop in the bonding strength of the semiconductor elements 15 a, 15 b, and 15 d and the electronic component 15 c on the circuit patterns 12 e to 12 h is avoided.

For a configuration where the plating process is performed on the bonding regions 15 a 1, 15 b 1, and 15 d 1 of the circuit patterns 12 e and 12 h for the semiconductor elements 15 a, 15 b, and 15 d, there is a drop-in wettability of the circuit patterns 12 e and 12 h for the solder 18 h, 18 i, and 18 l. This results in voids remaining in the bonds between the semiconductor elements 15 a, 15 b, and 15 d and the circuit patterns 12 e and 12 h, which causes a drop in the bonding strength of the semiconductor elements 15 a, 15 b, and 15 d. Thermal resistance between the semiconductor elements 15 a, 15 b, and 15 d and the metal substrate 20 also increases, which reduces the dissipation of heat.

For a configuration where a plating process is performed on the bonding regions 15 c 1 and 15 c 2 of the circuit patterns 12 f and 12 g for the electronic component 15 c, there is a drop-in wettability of the circuit patterns 12 f and 12 g for the solder 18 j and 18 k. This causes the solder 18 j and 18 k to creep up an electrode surface of the electronic component 15 c. Accordingly, there is a drop in the amount of the solder 18 j and 18 k formed between the circuit patterns 12 f and 12 g and the electronic component 15 c, resulting in a drop in the bonding strength of the electronic component 15 c.

The contact elements 16 a to 16 g have cylindrical shapes where internal voids are formed between open ends. One open end of each of the contact elements 16 a to 16 g is bonded via solder 18 a to 18 g onto bonding regions 16 a 1 to 16 g 1 of the circuit patterns 12 a to 12 d and 12 f to 12 h. The external connection terminals 19 a to 19 g are respectively press fitted into the other open ends of the contact elements 16 a to 16 g. In this way, the contact elements 16 a to 16 g are respectively bonded to the circuit patterns 12 a to 12 d and 12 f to 12 h using the solder 18 a to 18 g. Note that out of the contact elements 16 a to 16 g, FIG. 2 depicts the contact elements 16 b and 16 f bonded onto the circuit patterns 12 b and 12 h. The contact elements 16 a to 16 g are formed of a metal with superior electrical conductivity, such as aluminum, iron, silver, copper or an alloy that includes at least one of these metals. Also, to increase resistance to corrosion, it is possible to form a plating film on the surface of the contact elements 16 a to 16 g by a plating process using a metal, such as nickel or gold. Aside from nickel and gold, specific materials for a plating film include a nickel-phosphorus alloy and a nickel-boron alloy.

The external connection terminals 19 a to 19 g are formed of a metal with superior electrical conductivity, such as aluminum, iron, silver, copper or an alloy that includes at least one of these metals. The external connection terminals 19 a to 19 g are rod shaped and as one example are square in cross section. The external connection terminals 19 a to 19 g are respectively press-fitted into the internal voids of the contact elements 16 a to 16 g, so that the external connection terminals 19 a to 19 g are electrically connected via the contact elements 16 a to 16 g to the circuit patterns 12 a to 12 d and 12 f to 12 h.

As depicted in FIGS. 1 and 3 and described earlier, parts of the circuit patterns 12 a to 12 h aside from the side surfaces where the first protective films are formed are not subjected to a plating process or the like. This means that the solder 18 a to 18 g is directly applied to the bonding regions for the contact elements 16 a to 16 g on the circuit patterns 12 a to 12 d and 12 f to 12 h, thereby avoiding a drop in the wettability of the circuit patterns 12 a to 12 d and 12 f to 12 h for the solder 18 a to 18 g. Accordingly, a drop in the bonding strength of the contact elements 16 a to 16 g onto the circuit patterns 12 a to 12 d and 12 f to 12 h is avoided, and it is possible to reliably and stably press fit the external connection terminals 19 a to 19 g into the contact elements 16 a to 16 g.

For a configuration where a plating process is performed on the bonding regions for the contact elements 16 a to 16 g on the circuit patterns 12 a to 12 d and 12 f to 12 h, there is a drop in the wettability of the circuit patterns 12 a to 12 d and 12 f to 12 h for the solder 18 a to 18 g. When the contact elements 16 a to 16 g are bonded via the solder 18 a to 18 g onto the circuit patterns 12 a to 12 d and 12 f to 12 h, the solder 18 a to 18 g creeps up inside the contact elements 16 a to 16 g. This causes a reduction in the amount of solder 18 a to 18 g formed between the circuit patterns 12 a to 12 d and 12 f to 12 h and the contact elements 16 a to 16 g, which results in a drop in the bonding strength of the contact elements 16 a to 16 g. It also becomes difficult to press fit the external connection terminals 19 a to 19 g into the contact elements 16 a to 16 g. Alternatively, there is the risk of the contact elements 16 a to 16 g becoming bent when the external connection terminals 19 a to 19 g are press-fitted into the contact elements 16 a to 16 g.

Since a plating process or the like is not performed on the bonding regions for the semiconductor elements 15 a, 15 b, and 15 d, the electronic component 15 c, and the contact elements 16 a to 16 g on the circuit patterns 12 a to 12 h, a drop in the wettability of the circuit patterns 12 a to 12 h for the solder 18 a to 18 g is avoided. Accordingly, a drop in the bonding strength for the semiconductor elements 15 a, 15 b, and 15 d, the electronic component 15 c, and the contact elements 16 a to 16 g onto the circuit patterns 12 a to 12 h is avoided.

The solder 18 a to 18 l is formed of lead-free solder that has at least one alloy out of a tin-silver-copper alloy, a tin-zinc-bismuth alloy, a tin-copper alloy, and a tin-silver-indium-bismuth alloy as a main component. In addition to this main component, the solder 18 a to 18 l may include additives such as nickel, germanium, cobalt or silicon.

Note that on the ceramic circuit substrate 14, the circuit patterns 12 a to 12 h may be connected as appropriate by bonding wires 17 a to 17 e. More specifically, as depicted in FIGS. 1 and 3, a bonding region 12 b 4 of the circuit pattern 12 b and a bonding region 12 e 5 of the circuit pattern 12 e are electrically connected by the bonding wire 17 a. A bonding region 12 c 4 of the circuit pattern 12 c and (the source electrode of) the semiconductor element 15 a are electrically connected by the bonding wire 17 b and a bonding region 12 d 4 of the circuit pattern 12 d and (the gate electrode of) the semiconductor element 15 a are electrically connected by the bonding wire 17 c. In addition, the semiconductor elements 15 a and 15 b are electrically connected by the bonding wire 17 d and a bonding region 12 a 4 of the circuit pattern 12 a and a bonding region 12 h 4 of the circuit pattern 12 h are electrically connected by the bonding wire 17 e.

Note that the bonding of the bonding wires 17 a to 17 e to the bonding regions 12 a 4, 12 b 4, 12 c 4, 12 d 4, 12 e 5, and 12 h 4 onto the circuit patterns 12 a to 12 e and 12 h is performed by ultrasonic bonding, for example. The bonding wires 17 a to 17 e are formed of a metal with superior electrical conductivity, such as aluminum, copper, gold, or an alloy that includes at least one of these metals.

As depicted in FIGS. 1 and 3 and described earlier, parts of the circuit patterns 12 a to 12 h aside from the desired side surfaces are not subjected to a plating process or the like. Accordingly, it is possible to reliably bond the bonding wires 17 a to 17 e to the bonding regions 12 a 4, 12 b 4, 12 c 4, 12 d 4, 12 e 5, and 12 h 4 of the circuit patterns 12 a to 12 e and 12 h with no drop in bonding strength.

In this semiconductor device 10, the circuit patterns 12 a to 12 h and the semiconductor elements 15 a, 15 b, and 15 d are connected as appropriate by the bonding wires 17 a to 17 e. In addition, by electrically connecting the external connection terminals 19 a to 19 g to the circuit patterns 12 a to 12 d and 12 f to 12 h, a predetermined circuit that includes the semiconductor elements 15 a, 15 b, and 15 d and the electronic component 15 c is constructed.

The metal substrate 20 is formed of a metal with superior thermal conductivity, such as aluminum, iron, silver, copper or an alloy that includes at least one of these metals. Also, to improve the resistance to corrosion, it is possible to perform a plating process or the like to provide a material such as nickel on the surface of the metal substrate 20. As specific examples, a nickel-phosphorus alloy or a nickel-boron alloy may be used instead of nickel.

Note that it is also possible to improve heat dissipation by providing a cooler (not illustrated) on a rear surface of the metal substrate 20 by bonding via solder, silver solder, or the like or by mechanical attachment with thermal paste or the like in between. The cooler referred to here is formed of a metal with superior thermal conductivity, such as aluminum, iron, silver, copper or an alloy that includes at least one of these metals. As the cooler, it is possible to use a fin, a heat sink with a plurality of fins, a cooling device that uses water cooling, or another. It is also possible to use a configuration where the metal substrate 20 is integrally formed with the cooler. This configuration is formed of a metal with superior thermal conductivity, such as aluminum, iron, silver, copper or an alloy that includes at least one of these metals. To improve the resistance to corrosion, it is also possible to perform a plating process or the like to provide a material such as nickel on the surface of the metal substrate 20 that is integrated with the cooler. As specific examples, a nickel-phosphorus alloy or a nickel-boron alloy may be used instead of nickel.

The case 21 is formed in a box shape and has the cover portion 21 a that covers the ceramic circuit substrate 14 from above and a side wall portion 21 b that is provided on the outer circumference of the ceramic circuit substrate 14 and covers side portions of the ceramic circuit substrate 14. The case 21 is formed of a thermoplastic resin. As the resin, it is possible to use polyphenylene sulfide (PPS), polybutylene terephthalate (PBT) resin, polybutylene succinate (PBS) resin, polyamide (PA) resin, acrylonitrile butadiene styrene (ABS) resin, or the like.

The side wall portion 21 b of the case 21 is bonded to the metal substrate 20 via adhesive (not illustrated). Note that the adhesive may be applied to a base portion of the side wall portion 21 b of the case 21 or onto a region of the metal substrate 20 where the case 21 is mounted. As the method of applying the adhesive, it is possible to use any known method in the art, such as screen printing using a mask or a dispensing method that uses a syringe.

It is also possible to seal the inside of the case 21 using a sealant (not illustrated). As one example, the sealant is formed of a thermosetting resin, such as maleimide-modified epoxy resin, maleimide-modified phenol resin, and maleimide resin. The sealant may also be formed of a gel. The sealant is injected into the case 21 from a predetermined injection hole formed in the case 21. The sealant injected into the case 21 seals the ceramic circuit substrate 14, the semiconductor elements 15 a, 15 b, and 15 d, the electronic component 15 c, the contact elements 16 a to 16 g, the bonding wires 17 a to 17 e, and parts of the external connection terminals 19 a to 19 g on the metal substrate 20.

As described earlier, parts of the circuit patterns 12 a to 12 h aside from the side surfaces where the first protective film is formed are not subjected to a plating process or the like. This improves the adhesive force of the sealant on the circuit patterns 12 a to 12 h. Accordingly, it is possible to appropriately seal the ceramic circuit substrate 14, the semiconductor elements 15 a, 15 b, and 15 d, the electronic component 15 c and the like inside the case 21 with the sealant.

This completes the description of the configuration of the semiconductor device 10.

With the semiconductor device 10, input signals are applied from outside to the external connection terminals 19 a to 19 g and output signals are outputted. With a configuration where the first protective films are not formed on the side surfaces of the circuit patterns 12 a to 12 h, short circuits may occur between the circuit patterns due to corrosion products. More specifically, due to electrical fields and the like produced between facing side surfaces of the circuit patterns 12 a to 12 h, the copper of the circuit patterns 12 a to 12 h becomes ionized so that products of copper corrosion are produced between the circuit patterns 12 a to 12 h (a phenomenon called “ion migration”). When corrosion products are produced between adjacent circuit patterns, short circuits occur between the adjacent circuit patterns.

With the semiconductor device 10 however, out of the circuit patterns 12 a to 12 h, the first protective films are formed on facing side surfaces of the circuit patterns 12 a to 12 h. This prevents corrosion products from being produced by ion migration on facing side surfaces of adjacent circuit patterns out of the circuit patterns 12 a to 12 h. By doing so, it is possible to avoid short circuits between adjacent circuit patterns.

The semiconductor device 10 described above has the ceramic circuit substrate 14 that includes the insulating plate 11 and the plurality of circuit patterns 12 a to 12 h formed on the front surface of the insulating plate 11. The semiconductor device 10 includes the semiconductor elements 15 a, 15 b, and 15 d, the electronic component 15 c, the contact elements 16 a to 16 g that are disposed via the solder 18 a to 18 i on the bonding regions 15 a 1, 15 b 1, 15 d 1, 15 c 1, 15 c 2, and 16 a 1 to 16 g 1 on the front surfaces of the plurality of circuit patterns 12 a to 12 h, and also the bonding wires 17 a to 17 e. In addition, the semiconductor device 10 includes a plurality of first protective films formed on facing side surfaces of the plurality of circuit patterns 12 a to 12 h.

In the semiconductor device 10, the plurality of first protective films are formed on the facing side surfaces of the plurality of circuit patterns 12 a to 12 h and a plating process or the like is not performed on parts aside from the side surfaces.

This means that when the semiconductor elements 15 a, 15 b, and 15 d, the electronic component 15 c, and the contact elements 16 a to 16 g are directly bonded via the solder 18 a to 18 i onto the bonding regions 15 a 1, 15 b 1, 15 d 1, 15 c 1, 15 c 2, and 16 a 1 to 16 g 1 of the plurality of circuit patterns 12 a to 12 h, a drop in the wettability of the circuit patterns 12 a to 12 h for the solder 18 a to 18 i is avoided. Accordingly, a drop in the bonding strength of the semiconductor elements 15 a, 15 b, and 15 d, the electronic component 15 c, and the contact elements 16 a to 16 g on the plurality of circuit patterns 12 a to 12 h is avoided.

In addition, since the first protective films are formed on the facing side surfaces of the adjacent circuit patterns out of the plurality of circuit patterns 12 a to 12 h, the production of corrosion products by ion migration on the facing side surfaces of adjacent circuit patterns is avoided. By doing so, it is possible to avoid short circuits between adjacent circuit patterns.

Accordingly, there is a reduction in malfunctions of the semiconductor device 10, which improves reliability.

Note that in the above description, the semiconductor elements 15 a, 15 b, and 15 d, the electronic component 15 c, the contact elements 16 a to 16 g, and the bonding wires 17 a to 17 e are included as components of the semiconductor device 10. However, the expression “components” is not limited to these, and it is also possible to include any components that are bonded onto the circuit patterns 12 a to 12 h via solder, such as a lead frame.

As one example, the circuit patterns 12 a to 12 h of the ceramic circuit substrate 14 of the semiconductor device 10 are obtained by forming a copper foil on the insulating plate 11 and etching the copper foil into predetermined patterns. For the first embodiment described above, the side surfaces of the circuit patterns 12 a to 12 h are formed by etching so as to be perpendicular to the front surface of the insulating plate 11. However, depending on the state of the etching and the copper foil or the like on the insulating plate 11, there are cases where side surfaces of the circuit patterns 12 a to 12 h are not perpendicular to the front surface of the insulating plate 11 as described above. As examples of this situation, the circuit patterns 12 e and 12 h are described below with reference to FIG. 4.

FIG. 4 depicts circuit patterns on a substrate of a semiconductor device that is a modification of the first embodiment.

Note that the area depicted in FIG. 4 is an enlargement of a principal part of the cross section depicted in FIG. 2. The semiconductor elements 15 a, 15 b, and 15 d, the electronic component 15 c, and the contact elements 16 a to 16 g on the ceramic circuit substrate 14 and the bonding wires 17 a to 17 e are omitted from FIG. 4.

As depicted in FIG. 4, side surfaces 12 es and 12 hs of the circuit patterns 12 e and 12 h are formed by etching so as to be inclined and therefore not perpendicular to the front surface of the insulating plate 11.

Even when the side surfaces 12 es and 12 hs of the circuit patterns 12 e and 12 h are inclined in this way to the front surface of the insulating plate 11, in the same way as described above, the first protective films 12 e 4 and 12 h 2 are formed on the side surfaces 12 es and 12 hs. Likewise, first protective films are formed in the same way on side surfaces of the other circuit patterns 12 a to 12 d, 12 f, and 12 g that are omitted from the drawings, even when the side surfaces are inclined to the front surface of the insulating plate 11.

Even when the first protective films are formed in this way on inclined side surfaces, the same effects as the semiconductor device 10 described above are obtained.

Second Embodiment

In this second embodiment, a configuration where second protective films are formed in addition to the first protective films of the first embodiment will be described.

A semiconductor device 10 a according to the second embodiment will now be described with reference to FIGS. 5 and 6.

FIG. 5 is a plan view of a principal part of the semiconductor device according to the second embodiment. FIG. 6 is a cross-sectional view of the principal part of the semiconductor device according to the second embodiment.

Note that in the semiconductor device 10 a depicted in FIGS. 5 and 6, parts with the same reference numerals as the semiconductor device 10 according to the first embodiment (depicted in FIGS. 1 to 3) indicate the same configurations.

FIG. 5 corresponds to a plan view of the periphery of the circuit pattern 12 e in FIG. 1 of the first embodiment. FIG. 6 is a cross-sectional view along the dot-dash line X-X in FIG. 5.

In the same way as the semiconductor device 10, the semiconductor device 10 a has the first protective film formed on facing side surfaces of the plurality of circuit patterns 12 a to 12 h. In addition, with the semiconductor device 10 a, the second protective films are formed on edge portions of the front surfaces of the circuit patterns 12 a to 12 h along the first protective films formed on the side surfaces of the circuit patterns 12 a to 12 h.

As one example, as depicted in FIGS. 5 and 6, the circuit pattern 12 e has a first protective film 12 e 1 formed on the side surface that faces the circuit patterns 12 b to 12 d (see FIG. 1) and has a second protective film 12 e 6 formed on an edge portion of the front surface of the circuit pattern 12 e along the first protective film 12 e 1. The circuit pattern 12 e has first protective films 12 e 2 and 12 e 3 formed on side surfaces that face the circuit pattern 12 a (see FIG. 1) and has second protective films 12 e 7 and 12 e 8 formed on edge portions of the front surface of the circuit pattern 12 e along the first protective films 12 e 2 and 12 e 3. In addition, the circuit pattern 12 e has a first protective film 12 e 4 formed on a side surface that faces the circuit patterns 12 f to 12 h (see FIG. 1) and has the second protective film 12 e 9 formed on an edge portion of the front surface of the circuit pattern 12 e along the first protective film 12 e 4.

Also, as depicted in FIG. 5, the circuit pattern 12 a has first protective films 12 a 1 and 12 a 2 formed on the side surfaces that face the circuit patterns 12 b and 12 e (see FIG. 1) and has the second protective films 12 a 5 and 12 a 6 formed on edge portions of the front surface of the circuit pattern 12 a along the first protective films 12 a 1 and 12 a 2. Note that when no specific distinction is made between the second protective films, the reference numerals 12 a 6, 12 a 7, and 12 e 6 to 12 e 9 may be omitted.

Although omitted from the drawings, first protective films are formed on facing side surfaces of the circuit patterns 12 b to 12 d and 12 f to 12 h in the same way as the circuit patterns 12 a and 12 e and second protective films (also not illustrated) are formed on edge portions of the front surfaces of the circuit patterns 12 b to 12 d and 12 f to 12 h along the first protective films.

In the same way as the first protective films, the second protective films use a material with superior resistance to corrosion. Example materials include aluminum, nickel, titanium, chromium, molybdenum, tantalum, niobium, tungsten, vanadium, bismuth, zirconium, hafnium, gold, platinum, palladium, and alloys that include at least one of these metals.

In the same way as the first protective films in the first embodiment, it is possible to form the second protective films by electroless plating. When doing so, by forming a mask (resist) in advance in parts of the circuit patterns 12 a to 12 h where the first protective films and the second protective films are not to be formed and removing the resist after electroless plating, it is possible to form the first protective films and the second protective films on the circuit patterns 12 a to 12 h.

As described above in the first embodiment, the first protective films formed on the facing side surfaces of the circuit patterns 12 a to 12 h make it possible to prevent the production of corrosion products on the side surfaces.

However, with only the first protective films, it is not possible to prevent the production of corrosion products at edge portions along the first protective films of the respective front surfaces of adjacent circuit patterns. In particular, when the distance between adjacent circuit patterns is short and large electric fields are applied between adjacent circuit patterns, corrosion products are produced at the edge portions of the front surfaces of adjacent circuit patterns. This may result in the risk of adjacent circuit patterns becoming electrically connected.

For this reason, in the second embodiment, in addition to the first protective films formed on the side portions of the circuit patterns, the second protective films are formed on edge portions of the front surfaces of the circuit patterns along the first protective films. By doing so, the production of corrosion products due to ion migration on facing side surfaces and the edge portions of the front surfaces of adjacent circuit patterns out of the circuit patterns 12 a to 12 h is suppressed. This means that it is possible to reliably avoid short circuits between adjacent circuit patterns.

In this way, with the semiconductor device 10 a, the plurality of circuit patterns 12 a to 12 h have the plurality of first protective films formed on side surfaces that face adjacent circuit patterns and the second protective films formed along the first protective films on edge portions of the front surfaces of the circuit patterns 12 a to 12 h. Parts of the plurality of circuit patterns 12 a to 12 h aside from the side surfaces and the edge portions mentioned above are not subjected to a plating process or the like.

For this reason, when the semiconductor elements 15 a, 15 b, and 15 d, the electronic component 15 c, and the contact elements 16 a to 16 g are directly bonded via the solder 18 a to 18 i onto the bonding regions 15 a 1, 15 b 1, 15 d 1, 15 c 1, 15 c 2, and 16 a 1 to 16 g 1 of the plurality of circuit patterns 12 a to 12 h, a drop-in wettability of the plurality of circuit patterns 12 a to 12 h for the solder 18 a to 18 i is avoided. Accordingly, a drop in the bonding strength of the semiconductor elements 15 a, 15 b, and 15 d, the electronic component 15 c, and the contact elements 16 a to 16 g on the plurality of circuit patterns 12 a to 12 h is avoided.

In addition, since the plurality of circuit patterns 12 a to 12 h have the plurality of first protective films (reference numerals omitted) formed on the side surfaces of adjacent circuit patterns and the second protective films formed along the first protective films on the edge portions of the front surfaces of the circuit patterns, the production of corrosion products due to ion migration on the facing side surfaces of adjacent circuit patterns is avoided. By doing so, it is possible to reliably avoid short circuits between the adjacent circuit patterns.

Accordingly, there is a reduction in malfunctions of the semiconductor device 10 a, which improves reliability.

Third Embodiment

In the semiconductor device 10 a according to the second embodiment, the first protective films and the second protective films are formed to suppress the production of corrosion products due to ion migration on facing side surfaces and edge portions of front surfaces along these side surfaces of adjacent circuit patterns, out of the circuit patterns 12 a to 12 h.

A semiconductor device 10 b that is capable of more reliably suppressing the production of corrosion products between the circuit patterns 12 a to 12 h due to ion migration will now be described with reference to FIGS. 7 to 9.

FIG. 7 is a plan view of a principal part of a semiconductor device according to a third embodiment. FIGS. 8 and 9 are cross-sectional views of principal parts of the semiconductor device according to the third embodiment.

Note that in the semiconductor device 10 b depicted in FIGS. 7 and 9, parts with the same reference numerals as the semiconductor device 10 according to the first embodiment (depicted in FIGS. 1 to 3) indicate the same configurations.

In the same way as in the second embodiment, FIG. 7 corresponds to a plan view of the periphery of the circuit pattern 12 e in the first embodiment depicted in FIG. 1. FIG. 8 is a cross-sectional view along a dot-dash line X1-X1 in FIG. 7 and FIG. 9 is a cross-sectional view along a dot-dash line X2-X2 in FIG. 7.

In the same way as the semiconductor device 10, the semiconductor device 10 b has first protective films formed on facing side surfaces of the plurality of circuit patterns 12 a to 12 h. In addition, in the semiconductor device 10 b, the first protective films are formed on side surfaces aside from the facing side surfaces of the plurality of circuit patterns 12 a to 12 h. In the semiconductor device 10 b, second protective films are formed on edge portions of the front surfaces of the circuit patterns 12 a to 12 h along the first protective films formed on the side surfaces of the circuit patterns 12 a to 12 h. In the semiconductor device 10 b, second protective films are also formed on edge portions of the front surfaces of the circuit patterns 12 a to 12 h along the first protective films formed on side surfaces aside from the facing side surfaces of the plurality of circuit patterns 12 a to 12 h. In the semiconductor device 10 b, third protective films are formed on the front surfaces of the circuit patterns 12 a to 12 h so as to expose the bonding regions 15 a 1, 15 b 1, 15 d 1, 15 c 1, 15 c 2, and 16 a 1 to 16 g 1 of the circuit patterns 12 a to 12 h.

In other words, the first protective films, the second protective films, and the third protective films cover all of the plurality of circuit patterns 12 a to 12 h of the semiconductor device 10 b while exposing the bonding regions 15 a 1, 15 b 1, 15 d 1, 15 c 1, 15 c 2, and 16 a 1 to 16 g 1 on the front surfaces of the circuit patterns 12 a to 12 h.

For example, as depicted in FIGS. 7 to 9, in the same way as in the second embodiment, the circuit pattern 12 e has first protective films 12 e 1 to 12 e 4 formed on the side surfaces that face the circuit patterns 12 a to 12 d and 12 f to 12 h (see FIG. 1). In addition, first protective films 12 e 11 and 12 e 12 are formed on the remaining side surfaces of the circuit pattern 12 a. Second protective films 12 e 6 to 12 e 9 are formed on edge portions of the front surface of the circuit pattern 12 e along the first protective films 12 e 1 to 12 e 4. In addition, the circuit pattern 12 e has second protective films 12 e 13 and 12 e 14 formed on edge portions of the front surface of the circuit pattern 12 e along the first protective films 12 e 11 and 12 e 12.

In addition, the circuit pattern 12 e has the third protective film 12 e 10 formed on the front surface so as to expose the bonding regions 15 a 1 and 15 b 1.

As depicted in FIG. 7, the circuit pattern 12 a has the first protective films 12 a 1 and 12 a 2 formed on side surfaces that face the circuit patterns 12 b and 12 e (see FIG. 1) and the second protective films 12 a 5 and 12 a 6 formed on edge portions of the front surface of the circuit pattern 12 a along the first protective films 12 a 1 and 12 a 2.

The circuit pattern 12 a also has a first protective film 12 a 7 formed on the remaining side surface and the second protective film 12 a 8 formed on the edge portion of the front surface of the circuit pattern 12 a along the first protective film 12 a 7. However, on the circuit pattern 12 a of the semiconductor device 10 b, the first protective film 12 a 2 and the second protective film 12 a 6 are formed so as to extend along the edge of the circuit pattern 12 a unlike the semiconductor device 10 a.

In addition, the circuit pattern 12 a has a third protective film 12 a 10 formed on the front surface of the circuit pattern 12 a so as to expose the bonding region 16 a 1 (see FIG. 1, but omitted in FIG. 7). Note that when no specific distinction is made between the third protective films, the reference numerals 12 a 10 and 12 e 10 may be omitted.

Although omitted from the drawings, in the same way as the circuit patterns 12 a and 12 e, the circuit patterns 12 b to 12 d and 12 f to 12 h have the first protective films and the second protective films formed on all of the side surfaces around the circumference and edge portions of the front surfaces along these side surfaces, and also have third protective films (not illustrated) formed on the front surfaces of the circuit patterns 12 b to 12 d and 12 f to 12 h so as to expose the first protective films 12 b 1, 12 c 2, 12 d 1, 12 f 1, 12 g 1 and 12 h 1, and the bonding surfaces 16 a 1 to 16 g 1.

Note that in the same way as the first protective films and the second protective films, the third protective films use a material with superior resistance to corrosion. In the same way as the first protective films, example materials include aluminum, nickel, titanium, chromium, molybdenum, tantalum, niobium, tungsten, vanadium, bismuth, zirconium, hafnium, gold, platinum, palladium, and alloys that include at least one of these metals.

In the same way as the first and second protective films in the first and second embodiments, it is possible to form the third protective films by electroless plating. When doing so, by forming a mask (resist) in advance in the bonding regions 15 a 1, 15 b 1, 15 d 1, 15 c 1, 15 c 2, and 16 a 1 to 16 g 1 of the circuit patterns 12 a to 12 h and removing the resist after electroless plating, it is possible to form the first protective films, the second protective films, and the third protective films on the circuit patterns 12 a to 12 h. Accordingly, the first protective films, the second protective films, and the third protective films are integrally formed. In other words, to form the first protective films, the second protective films, and the third protective films on the plurality of circuit patterns 12 a to 12 h of the semiconductor device 10 b, it is sufficient to mask (i.e., provide a resist on) the bonding regions 15 a 1, 15 b 1, 15 d 1, 15 c 1, 15 c 2, and 16 a 1 to 16 g 1. This means that compared to the first and second embodiments, it is easy to form the first protective films, the second protective films, and the third protective films.

In the semiconductor device 10 b described above, the plurality of circuit patterns 12 a to 12 h have the plurality of first protective films formed on the side surfaces around the circumferences of the circuit patterns and the second protective films formed along the first protective films on edge portions of the front surfaces of the circuit patterns 12 a to 12 h. In addition, the plurality of circuit patterns 12 a to 12 h have the third protective films formed on the front surfaces so as to expose the bonding regions 15 a 1, 15 b 1, 15 d 1, 15 c 1, 15 c 2, and 16 a 1 to 16 g 1.

This means that when the semiconductor elements 15 a, 15 b, and 15 d, the electronic component 15 c, and the contact elements 16 a to 16 g are directly bonded via the solder 18 a to 18 i to the bonding regions 15 a 1, 15 b 1, 15 d 1, 15 c 1, 15 c 2, and 16 a 1 to 16 g 1 of the plurality of circuit patterns 12 a to 12 h, a drop-in wettability of the plurality of circuit patterns 12 a to 12 h for the solder 18 a to 18 i is avoided. Accordingly, a drop in the bonding strength of the semiconductor elements 15 a, 15 b, and 15 d, the electronic component 15 c, and the contact elements 16 a to 16 g on the plurality of circuit patterns 12 e to 12 h is avoided.

In addition, the plurality of circuit patterns 12 a to 12 h have a plurality of first protective films formed on the side surfaces around the circumferences of the circuit patterns, second protective films formed along the first protective films on edge portions of the front surfaces of the circuit patterns, and the third protective films formed so as to expose bonding regions on the front surfaces of the circuit patterns. This means that production of corrosion products between the circuit patterns due to ion migration is reliably suppressed. By doing so, it is possible to reliably prevent short circuits between the circuit patterns.

Accordingly, there is a reduction in malfunctions of the semiconductor device 10 b, which improves reliability.

Note that when considering how the first protective films, the second protective films, and the third protective films are formed in the semiconductor device 10 b according to the third embodiment, so long as the bonding regions 15 a 1, 15 b 1, 15 d 1, 15 c 1, 15 c 2, and 16 a 1 to 16 g 1 of the plurality of circuit patterns 12 a to 12 h are exposed in the semiconductor device 10, it is sufficient to form a plurality of first protective films on at least facing side surfaces of adjacent circuit patterns out of the plurality of circuit patterns 12 a to 12 h.

In the same way, so long as the bonding regions 15 a 1, 15 b 1, 15 d 1, 15 c 1, 15 c 2, and 16 a 1 to 16 g 1 of the plurality of circuit patterns 12 a to 12 h in the semiconductor device 10 b are exposed, it is sufficient to form the plurality of first protective films to be formed on facing side surfaces of the circuit patterns and to form the second protective films along the first protective films on edge portions of the front surfaces of the circuit patterns 12 a to 12 h.

According to the present embodiments, it is possible to avoid a drop in bonding strength of components on circuit patterns and avoid a drop in the reliability of a semiconductor device.

All examples and conditional language provided herein are intended for the pedagogical purposes of aiding the reader in understanding the invention and the concepts contributed by the inventor to further the art, and are not to be construed as limitations to such specifically recited examples and conditions, nor does the organization of such examples in the specification relate to a showing of the superiority and inferiority of the invention. Although one or more embodiments of the present invention have been described in detail, it should be understood that various changes, substitutions, and alterations could be made hereto without departing from the spirit and scope of the invention. 

What is claimed is:
 1. A semiconductor device, comprising: a substrate including an insulating plate having a front surface and a plurality of circuit patterns formed on the front surface of the insulating plate, that have respective front surfaces, that have respective side portions, and that have respective edge portions on the front surfaces of the plurality of circuit patterns along the side portions; a plurality of protective films formed on at least facing side portions of the plurality of circuit patterns so as to expose bonding regions on the front surfaces of the plurality of circuit patterns; and a plurality of components bonded via solder onto the bonding regions of the plurality of circuit patterns.
 2. The semiconductor device according to claim 1, wherein the plurality of protective films are formed on at least the facing side portions and on the edge portions of the front surfaces of the plurality of circuit patterns along the side portions.
 3. The semiconductor device according to claim 2, wherein the plurality of protective films are formed on the side portions, on the edge portions, and on the front surfaces of the plurality of circuit patterns so as to expose the bonding regions.
 4. The semiconductor device according to claim 1, wherein at least one of the plurality of components is bonded so as to span between adjacent circuit patterns among the plurality of circuit patterns.
 5. The semiconductor device according to claim 1, wherein the plurality of components are at least one of semiconductor elements and contact elements.
 6. The semiconductor device according to claim 4, wherein the plurality of components are electronic components.
 7. The semiconductor device according to claim 1, wherein the plurality of circuit patterns are formed of copper or copper alloy.
 8. The semiconductor device according to claim 1, wherein the plurality of first protective films are formed of nickel or nickel alloy.
 9. The semiconductor device according to claim 1, wherein the solder is lead-free solder that includes at least one alloy selected from the group consisting of a tin-silver-copper alloy, a tin-zinc-bismuth alloy, a tin-copper alloy, and a tin-silver-indium-bismuth alloy as a main component.
 10. The semiconductor device according to claim 9, wherein nickel, germanium, cobalt or silicon is added to the solder. 